PART |
Description |
Maker |
BCR6 BCR6AM |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
S4707-01 |
MOSFET, Switching; VDSS (V): 600; ID (A): 21; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.315; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 0.107; Package: TO-3P
|
Hamamatsu Photonics
|
TM55CZ-H TM55CZ-M TM55DZ-H TM55DZ-M |
MEDIUM POWER GENERAL USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
CM50E3U-24H |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
CM50TF-24H |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
CM20MD-12H |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
|
TM60SA-6 |
MEDIUM POWER GENERAL USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
QM30CY-H QM30 |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
QM50TF-HB |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|